收藏本站
Preliminary Technical Information
PolarP TM
Power MOSFET
IXTR32P60P
V DSS
I D25
R DS(on)
=
=
≤
- 600V
- 18A
385m Ω
P-Channel Enhancement Mode
Avalanche Rated
ISOPLUS247 (IXTR)
E153432
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
- 600
- 600
V
V
V GSS
V GSM
Continuous
Transient
± 20
± 30
V
V
Isolated Tab
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
-18
- 90
- 32
A
A
A
G = Gate
S = Source
D = Drain
E AS
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
M d
Weight
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
50/60 Hz, RMS t = 1min
I ISOL ≤ 1mA t = 1s
Mounting force
3.5
10
310
-55 ... +150
150
-55 ... +150
300
260
2500
3000
20..120/4.5..27
5
J
V/ns
W
° C
° C
° C
° C
° C
V~
V~
N/lb.
g
Features
Silicon chip on Direct-Copper Bond
(DCB) substrate
- UL recognized package
- Isolated mounting surface
- 2500V electrical isolation
Avalanche rated
The rugged PolarP TM process
Low Q G
Low Drain-to-Tab capacitance
Low package inductance
- easy to drive and to protect
Applications
High side switching
Push-pull amplifiers
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
DC Choppers
Automatic test equipment
BV DSS
V GS = 0V, I D = - 250 μ A
- 500
V
Load-Switch Application
Fuel Injection Systems
V GS(th)
V DS = V GS , I D = - 250 μ A
- 2.5
- 4.5
V
I GSS
V GS = ± 20V, V DS = 0V
± 100 nA
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = -10V, I D = -16A, Note 1
T J = 125 ° C
- 50 μ A
- 250 μ A
385 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS99992(05/08)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXTR36P15P MOSFET P-CH 150V 22A ISOPLUS247
IXTR48P20P MOSFET P-CH 200V 30A ISOPLUS247
IXTR62N15P MOSFET N-CH ISOPLUS-247
IXTT100N25P MOSFET N-CH 250V 100A TO-268
IXTT110N10P MOSFET N-CH 100V 110A TO-268
IXTT120N15P MOSFET N-CH 150V 120A TO-268
IXTT16P60P MOSFET P-CH 600V 16A TO-268
IXTT170N10P MOSFET N-CH 100V 170A TO-268
相关代理商/技术参数
IXTR36P15P 功能描述:MOSFET -22.0 Amps -150V 0.120 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR40P50P 功能描述:MOSFET -22.0 Amps -500V 0.260 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR48P20P 功能描述:MOSFET -30.0 Amps -200V 0.093 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR62N15P 功能描述:MOSFET 62 Amps 150V 0.045 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR90P10P 功能描述:MOSFET -57.0 Amps -100V 0.270 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTR90P20P 功能描述:MOSFET -90.0 Amps -200V 0.048 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT02N450HV 制造商:IXYS Corporation 功能描述:MOSFET N-CH 4500V 200MA TO268 制造商:IXYS Corporation 功能描述:MOSFET 4500V 200mA HV Power MOSFET
IXTT100N25P 功能描述:MOSFET 100 Amps 250V 0.027 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube